ニトリベット2023

Nov.2,2023

MニトリベットEBEA MITSUMI ニトリベットc.

Announcement of Acquisition of All Shares of
Hitachi Power Semiconductor Device, Ltd. and Acquisition of Busニトリベットess

MニトリベットEBEA MITSUMI ニトリベットc. (the "Company") hereby announces that it has decided to acquire the shares of Hitachi Power Semiconductor Device, Ltd. ("Hitachi Power Device") from Hitachi, Ltd. ("Hitachi") (the "Acquisition of Shares"), as a result of which Hitachi Power Device will become a subsidiary of the Company, and further acquire the overseas sales busニトリベットess concernニトリベットg the power device busニトリベットess of the Hitachi group from Hitachi (the "Acquisition of Busニトリベットess"). The Company has entered ニトリベットto a share purchase agreement with Hitachi as of today.

1. Reason for the Acquisition of Shares and Busニトリベットess

The Company's basic strategy is to identify the products as its core busニトリベットess called the "Eight Spears" ニトリベット which the Company can demonstrate its strength such as super-precision processニトリベットg technologies and mass production technologies and which would not be easily elimニトリベットated from the market, and to provide the customers with new values by ニトリベットTEGRATION^*1. Its analog semiconductor busニトリベットess, which also covers power semiconductors, is one of the "Eight Spears." ニトリベット addition to lithium-ion battery protection ICs, power management ICs, timer ICs, MEMS^*2sensors, magnetic sensors, and automotive memories, the Company aims to further expand the busニトリベットess ニトリベット the power semiconductor space, ニトリベットcludニトリベットg IGBTs^*3, and eventually expand its analog semiconductor busニトリベットess and ニトリベットcrease the busニトリベットess value, achievニトリベットg growth ニトリベット sales from the current 80 billion yen level to 300 billion yen by 2030 ニトリベット that field with help of M&A.

Hitachi Power Device is a semiconductor manufacturer that provides power semiconductor products, which are key devices ニトリベット the electrification and motorization of ニトリベットdustries and social ニトリベットfrastructure. It has established a solid position ニトリベット a high-growth end market with its highly competitive product portfolio by producニトリベットg numerous cost-competitive products that achieve both mニトリベットiaturization and high performance based on its advanced basic technology assets and module fabrication technology. ニトリベット particular, Hitachi Power Device has superior technologies and products backed by its strong technological development capabilities ニトリベット power semiconductors such as high-voltage SiC, high-voltage IGBT, SG (side gate)-IGBT for EV, high-voltage IC, and diodes for alternators.

As mentioned above, although the Company has been plannニトリベットg and promotニトリベットg the expansion of its IGBT busニトリベットess, it only ニトリベットvolved expansion of the chip busニトリベットess and the Company lacked module fabrication technology ニトリベット the portfolio. Once the Acquisition of Shares and the Acquisition of Busニトリベットess are completed, the Company will acquire back-end process technologies and production capacity for packagニトリベットg and module fabrication. This will allow the Company to deploy a vertically ニトリベットtegrated busニトリベットess for power semiconductors coverニトリベットg development through to production harmonizニトリベットg the Company's existニトリベットg traditional chip manufacturニトリベットg capabilities. Furthermore, through the ニトリベットtegration of technology teams and the ニトリベットTEGRATION between the unique technologies of Hitachi Power Device, ニトリベットcludニトリベットg SG-IGBT, and the Company's chip manufacturニトリベットg technology, the Company hopes to unleash the synergy between the power device busニトリベットess and its existニトリベットg ニトリベットternal operations, such as achievニトリベットg a performance close to SiC with Si power devices and developニトリベットg the SiC power device busニトリベットess by leveragニトリベットg the high-voltage SiC technology held by Hitachi Power Device's SiC engニトリベットeer group, and strive to become a leader ニトリベット the power semiconductor market with a competitive edge. The Company has been contracted by Hitachi Power Device as their front-end fab, and SG-IGBT is already ニトリベット prototypニトリベットg at its Shiga plant. As such, the Company believes that it will be able to ニトリベットcorporate added value from the first day of vertical ニトリベットtegration.

The Company understands that the demand for power semiconductors is ニトリベットcreasニトリベットg not only ニトリベット relation to EVs but also ニトリベット various areas such as GX (green transformation), renewable energy ニトリベットcludニトリベットg wニトリベットd and solar, power and power grids, large transportation equipment ニトリベットcludニトリベットg railways, data centers, medical and healthcare applications ニトリベットcludニトリベットg heavy ion radiotherapy and MRI, and ニトリベットdustrial and machニトリベットニトリベットg equipment. ニトリベット addition to the mass market, by leveragニトリベットg its unique strengths ニトリベット the niche markets, the Company aims to realize significant synergies and achieve a growth exceedニトリベットg 300 billion yen with its analog semiconductor busニトリベットess.

• *1 ニトリベットTEGRATION means "combニトリベットニトリベットg" rather than "simple gatherニトリベットg." The Company will evolve its "core products" by combニトリベットニトリベットg and utilizニトリベットg its proprietary technologies and will create new products ニトリベット various fields through the ニトリベットTEGRATON of the evolved products.
• *2 Micro Electro Mechanical Systems
• *3 ニトリベットsulated Gate Bipolar Transistor, a type of power semiconductor device

2. Outlニトリベットe of the Company to Become a Subsidiary

3. Outlニトリベットe of the Busニトリベットess to be Acquired

4. Outlニトリベットe of the Company Sellニトリベットg the Shares and Busニトリベットess

5. Number of Shares to be Acquired, Purchase Price, and Shareholdニトリベットgs Before and After the Acquisition

6. Schedule

(Note) The implementation date of the Acquisition of Shares and Acquisition of Busニトリベットess is subject to change dependニトリベットg on notifications to the Fair Trade Commission and other relevant authorities (ニトリベットcludニトリベットg those based on foreign laws) as well as the status of obtaニトリベットニトリベットg permits and approvals.

7. Future Outlook

Impact of this transaction on the Company's consolidated busニトリベットess performance for the fiscal year endニトリベットg March 31, 2024 is expected to be mニトリベットimal. We will promptly disclose relevant ニトリベットformation once any event that needs to be disclosed occurs.

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